The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Jun. 17, 2004
Ihar Kasko, Mennecy, FR;
Sivananda K. Kanakasabapathy, Hopewell Junction, NY (US);
Gregory Costrini, Hopewell Junction, NY (US);
Ihar Kasko, Mennecy, FR;
Sivananda K. Kanakasabapathy, Hopewell Junction, NY (US);
Gregory Costrini, Hopewell Junction, NY (US);
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof. At least the top magnetic material layer of a magnetic stack is patterned using a hard mask, and a conformal insulating material is deposited over the patterned top magnetic material layer and hard mask. The conformal insulating material is anisotropically etched to remove the conformal insulating material over vertical sidewalls of at least the patterned top magnetic material layer and the hard mask. The remaining conformal insulating material comprises a sidewall spacer hard mask that is used as a mask to pattern the remaining material layers of the magnetic stack. The sidewall spacer hard mask may be left remaining in the magnetic memory cell structure.