The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Dec. 13, 2006
Masaru Yano, Tokyo, JP;
Hideki Arakawa, Kanagawa, JP;
Mototada Sakashita, Tokyo, JP;
Akira Ogawa, Tokyo, JP;
Yoshiaki Shinmura, Tokyo, JP;
Hajime Aoki, Tokyo, JP;
Masaru Yano, Tokyo, JP;
Hideki Arakawa, Kanagawa, JP;
Mototada Sakashita, Tokyo, JP;
Akira Ogawa, Tokyo, JP;
Yoshiaki Shinmura, Tokyo, JP;
Hajime Aoki, Tokyo, JP;
Spansion, LLC, Sunnyvale, CA (US);
Abstract
A control method for a nonvolatile storage device having a storage mode in which in a memory cell provided with a trapping dielectric layer 1-bit data is stored depending on the presence or absence of charge in a first trapping region. In a dynamic reference cell initialization operation, a charge accumulation operation is performed, as a preset operation in the initialization operation, on second trapping regions of first and second dynamic reference cells to a charge accumulation operation on a second trapping region of the memory cell. In addition, at the time of data rewrite, preprogram verification and preprogramming are performed on the first trapping regions. This makes it possible to shorten the time taken for initialization and data rewrite.