The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Dec. 27, 2002
Shinji Uya, Miyagi, JP;
Yong Gwan Kim, Miyagi, JP;
Tomohiro Sakamoto, Miyagi, JP;
Fujifilm Corporation, Tokyo, JP;
Abstract
An n-type semiconductor substratehas a p-type wellin which are formed a charge transfer channel, a flowing diffusion regionmade of an n-type impurity region, an n-type buried regionand a reset drain region. Transfer gatesandof a horizontal CCD and an output gateare formed on the surface of the charge transfer channel, with an insulation filminterposed; reset electrodesandare formed on the surface of the buried region, again with the insulation filminterposed. The floating diffusion regionis connected to a source follower circuit. The reset electrodesandare provided adjacent to each other in the channel direction of a reset gate sectionand can be driven independently of each other.