The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Dec. 30, 2005
Jae-sup Lee, Yongin-si, KR;
Hyun-il Kang, Yongin-si, KR;
Seong-soo Lee, Suwon-si, KR;
Holger Lothar, Ulwang-si, KR;
Ju-hyun Ko, Seongnam-si, KR;
Dong-hyun Baek, Suwon-si, KR;
Song-cheol Hong, Daejeon, KR;
Jae-Sup Lee, Yongin-si, KR;
Hyun-Il Kang, Yongin-si, KR;
Seong-Soo Lee, Suwon-si, KR;
Holger Lothar, Ulwang-si, KR;
Ju-Hyun Ko, Seongnam-si, KR;
Dong-Hyun Baek, Suwon-si, KR;
Song-Cheol Hong, Daejeon, KR;
Abstract
A small-sized on-chip complementary metal-oxide semiconductor (CMOS) Power Amplifier having improved efficiency is provided herein. The on-chip CMOS power amplifier is capable of improving efficiency and maximizing output thereof by enhancing a K factor, which may cause a problem in a power amplifier having a distributed active transformer structure. The on-chip CMOS power amplifier having an improved efficiency and being fabricated in a small size, the on-chip CMOS power amplifier includes a primary winding located at a first layer, secondary windings located at a second layer, which is an upper part of the first layer, the secondary windings being located corresponding to a position of the primary winding, and a cross section for coupling the second windings with each other.