The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Feb. 02, 2005
Applicants:
Yoshinori Hino, Gunma, JP;
Naoei Takeishi, Niigata, JP;
Toshimitsu Taniguchi, Gunma, JP;
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor forming transistors on a semiconductor substrate includes a low concentration source/drain region formed in the semiconductor substrate, a high concentration source/drain region formed in the source/drain region, a gate electrode formed on the substrate through gate oxide film, a P type body region formed under the gate electrode and placed between the source/drain regions and, plug contact portions contacting the source/drain region and arranged in plural, and a source/drain electrode connecting to the source/drain region with contact through the contact portions.