The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Apr. 27, 2005
Applicants:
Makoto Yamamoto, Tenri, JP;
Eiji Suematsu, Tenri, JP;
Inventors:
Makoto Yamamoto, Tenri, JP;
Eiji Suematsu, Tenri, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high frequency semiconductor apparatus is provided which prevents characteristics of a high frequency semiconductor element from being deteriorated so that the high frequency semiconductor element can be made to operate stably. The high frequency semiconductor apparatus is so configured that heat generated by a high frequency semiconductor element is sequentially conducted through a grounding via hole to a first ground layer, a first via hole, a first ground sublayer, a bonding material layer, a second ground layer, a second via hole, and a third ground layer.