The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Dec. 03, 2004
Zi-ping Chen, Shindian City, Taipei, TW;
Ming-dou Ker, Kao-Feng Li, E. District, Hsinchu 300, TW;
Zi-Ping Chen, Shindian City, Taipei, TW;
Ming-Dou Ker, Kao-Feng Li, E. District, Hsinchu 300, TW;
Other;
Abstract
A diode with low substrate current leakage and suitable for BiCMOS process technology. A buried layer is formed on a semiconductor substrate. A connection region and well contact the buried layer. Isolation regions are adjacent to two sides of the buried layer, each deeper than the buried layer. The isolation regions and the buried layer isolate the connection zone and the well from the substrate. The first doped region in the well is a first electrode. The well and the connection region are electrically connected, acting as a second electrode.