The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Aug. 26, 2005
Joerg Vollrath, Olching, DE;
Joerg Vollrath, Olching, DE;
Infineon Technologies AG, Munich, DE;
Abstract
An integrated semiconductor circuit includes a transistor and a strip conductor (). The transistor includes a first () and a second source/drain region () and a gate electrode. The strip conductor () is electrically insulated from a semiconductor body at least by a gate dielectric and forms the gate electrode in the area of the transistor. The strip conductor () extends along a first direction (x) in the area of the transistor. The second source/drain region () is arranged offset with respect to the first source/drain region () in the first direction (x). The transistor thus formed has an inversion channel (K) that only extends between two corner areas () facing one another of the first and of the second source/drain region, i.e. is much narrower than in the case of a conventional transistor.