The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Jun. 01, 2006
Li-shu Chen, Ellicott City, MD (US);
Victor Veliadis, Midlothian, VA (US);
Li-Shu Chen, Ellicott City, MD (US);
Victor Veliadis, Midlothian, VA (US);
Northrop Grumman Corporation, Los Angeles, CA (US);
Abstract
A structure for use in a static induction transistor includes a semiconductor body having first and second semiconductor layers on a substrate, with the second layer having a dopant concentration of around an order of magnitude higher than the dopant concentration of the first layer. A plurality of sources are located on the second layer. A plurality of gates are ion implanted in the second layer, an end one of the gates being connected to all of the plurality of gates and constituting a gate bus. The gate bus has an extension connecting the gate bus in the second layer of higher dopant concentration to the first layer of lower dopant concentration. The extension is ion implanted in either a series of steps or a sloping surface which is formed in the first and second layers.