Gan semiconductor device

Abstract

Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak. A GaN-based semiconductor laser device () is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device () is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate () is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate () without providing a GaN-ELO structure layer. The GaN single-crystal substrate () has continuous belt-shaped core portions () each having a width of 10 μm. These core portions () are spaced apart from each other by a distance of about 400 μm. A laser stripe (), a pad metal () for the p-side electrode (), and the n-side electrode () are provided on the multilayer structure in a region except the core portions () of the GaN single-crystal substrate (). The horizontal distance Sp between the pad metal () and the core portion () adjacent thereto is 95 μm, and the horizontal distance Sn between the n-side electrode () and the core portion () adjacent thereto is also 95 μm.