The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2008

Filed:

May. 12, 2005
Applicants:

Ryuichi Yatsunami, Fukuoka, JP;

Kei Sakanoue, Fukuoka, JP;

Inventors:

Ryuichi Yatsunami, Fukuoka, JP;

Kei Sakanoue, Fukuoka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/10 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

To provide an organic field effect transistor with stable characteristics and a long life span, an organic field effect transistor includes a gate electrodeformed on an organic semiconductor filmmade of an organic semiconductor material with a gate insulating filminterposed therebetween; and a source electrodeand a drain electrodeprovided so as to come in contacts with the organic semiconductor film with the gate electrodeinterposed therebetween. At least one of the source electrodeand the drain electrodeis formed in contact with the organic semiconductor filmwith charge injection layersandmade of an inorganic material interposed therebetween.


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