The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Jun. 04, 2003
Hisao Sato, Tokushima, JP;
Tomoya Sugahara, Tokushima, JP;
Shinji Kitazawa, Tokushima, JP;
Yoshihiko Muramoto, Tokushima, JP;
Shiro Sakai, Tokushima, JP;
Hisao Sato, Tokushima, JP;
Tomoya Sugahara, Tokushima, JP;
Shinji Kitazawa, Tokushima, JP;
Yoshihiko Muramoto, Tokushima, JP;
Shiro Sakai, Tokushima, JP;
Nitride Semiconductors Co., Ltd., Tokushima, JP;
Abstract
A light-emitting element using GaN. On a substrate (), formed are an SiN buffer layer (), a GaN buffer layer (), an undoped GaN layer (), an Si-doped n-GaN layer (), an SLS layer (), an undoped GaN layer (), an MQW light-emitting layer (), an SLS layer (), and a p-GaN layer (), forming a p electrode () and an n electrode (). The MQW light-emitting layer () has a structure in which InGaN well layers and AlGaN barrier layers are alternated. The Al content ratios of the SLS layers (, and) are more than 5% and less than 24%. The In content ratio of the well layer in the MQW light-emitting layer () is more than 3% and less than 20%. The Al content ratio of the barrier layer is more than 1% and less than 30%. By adjusting the content ratio and film thickness of each layer to a desired value, the light luminous efficiency for wavelength of less than 400 nm is improved.