The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Oct. 03, 2005
Terence L Kane, Wappingers Falls, NY (US);
Darrell L Miles, Wappingers Falls, NY (US);
John D Sylvestri, Poughkeepsie, NY (US);
Michael P Tenney, Poughkeepsie, NY (US);
Terence L Kane, Wappingers Falls, NY (US);
Darrell L Miles, Wappingers Falls, NY (US);
John D Sylvestri, Poughkeepsie, NY (US);
Michael P Tenney, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor only within the backside window via an opening in a focusing shield. This focused collimated ion plasma contacts the semiconductor, only within the window, while the semiconductor is simultaneously being rotated and tilted by a temperature controlled stage, for uniform removal of semiconductor layering such that the semiconductor features, in a location on the semiconductor corresponding to the backside window, are exposed. Backside unlayering of the invention may be enhanced by CAIBE processing.