The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Apr. 28, 2006
Kenji Matsuzaki, Mie, JP;
Kenji Matsuzaki, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes removing a low-resistivity metal film, conductive layer, third insulating film and an upper part of the electrode layer in a gate electrode isolation region with a gate forming pattern serving as a mask, forming a protecting film so that the protecting film covers the low-resistivity metal film, conductive layer, third insulating film and upper surface of the electrode layer, removing the protecting film formed on the upper surface of the electrode layer located in the upper surface of the electrode layer in the gate electrode isolation region, removing the electrode layer in the gate electrode isolation region, and removing residue of the protecting film.