The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Sep. 01, 2006
Jihong Chen, Plano, TX (US);
Srinivasan Chakravarthi, Murphy, TX (US);
Eddie H. Breashears, Allen, TX (US);
Amitabh Jain, Allen, TX (US);
Jihong Chen, Plano, TX (US);
Srinivasan Chakravarthi, Murphy, TX (US);
Eddie H. Breashears, Allen, TX (US);
Amitabh Jain, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention provides a method for manufacturing a transistor device, and a method for manufacturing an integrated circuit including the same. The method for manufacturing the transistor device, among other elements, includes forming a gate structure over a substrate, implanting an atom selected from the group consisting of fluorine, silicon, or germanium into the substrate proximate the gate structure to cause at least a portion of the substrate to be in a sub-amorphous state, and implanting a dopant into the substrate having the implanted atom therein, thereby forming source/drain regions in the substrate, wherein the transistor device does not have a halo/pocket implant.