The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Sep. 02, 2005
Syuusei Takami, Kagoshima-ken, JP;
Syuusei Takami, Kagoshima-ken, JP;
Yamaha Corporation, , JP;
Abstract
After a field insulating film having an element opening is formed on the surface of a p-type well, a gate insulating film is formed on a semiconductor surface in the element opening. A gate electrode layer of polysilicon or the like is formed on the insulating film. By using as a mask a lamination of the electrode layer and gate insulating film and the field insulating film, an ion implantation process is executed to form n-type source and drain regions. After the electrode layer is made narrow and thin by an isotropic etching process, n-type source and drain regions are formed by an ion implantation process using as a mask the lamination of the electrode layer and gate insulating film and the field insulating film.