The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
Feb. 06, 2004
Hong-sick Park, Yongin-si, KR;
Hong-je Cho, Suwon-si, KR;
Sung-chul Kang, Yongin-si, KR;
Pong-ok Park, Seoul, KR;
An-na Park, Busan-si, KR;
Hong-Sick Park, Yongin-si, KR;
Hong-Je Cho, Suwon-si, KR;
Sung-Chul Kang, Yongin-si, KR;
Pong-Ok Park, Seoul, KR;
An-Na Park, Busan-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)L, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of HO, NH, CN and NHR (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile