The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2008
Filed:
May. 11, 2005
Jung Hoon Seo, Seoul, KR;
Jun Ho Jang, Gyeonggi-do, KR;
Jong Wook Kim, Gyeonggi-do, KR;
LG Electronics Inc., Seoul, KR;
Abstract
The present invention relates to a nitride semiconductor device and a method for fabricating the same. According to the present invention, there is an advantage in that trenches isolating respective nitride semiconductor unit devices from one another are filled with crack-inhibiting walls to remove voids, thereby minimizing cracks or damage that may occur in the nitride semiconductor unit devices during a laser lift-off process. In addition, there is an advantage in that the devices are bonded through a bonding-reinforcing plate or the crack-inhibiting walls to a carrier substrate with a bonding member coated thereon, thereby maintaining a strong bonding force to the carrier substrate.