The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Dec. 08, 2005
Applicants:
Brian K. Mcginley, Saratoga, CA (US);
Jonathan D. Mohn, Saratoga, CA (US);
Howard Woo, San Jose, CA (US);
Inventors:
Brian K. McGinley, Saratoga, CA (US);
Jonathan D. Mohn, Saratoga, CA (US);
Howard Woo, San Jose, CA (US);
Assignee:
Miradia Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 26/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Hydrogen cleave silicon process for light modulating mirror structure using single crystal silicon as the base cross-member. Existing processes use two critical alignment steps that can contribute to higher actuation voltages and result in lower manufacturing yields. The hydrogen cleave process simplifies the manufacturing process to one step: transferring a thin film of single crystal silicon to the CMOS substrate, resulting in minimal alignment error and providing large bonding area.