The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Sep. 19, 2006
Prashanti Govindu, Santa Clara, CA (US);
Feng Pan, Fremont, CA (US);
Man Mui, Santa Clara, CA (US);
Gyuwan Kwon, Cupertino, CA (US);
Trung Pham, Fremont, CA (US);
Chi-ming Wang, Fremont, CA (US);
Prashanti Govindu, Santa Clara, CA (US);
Feng Pan, Fremont, CA (US);
Man Mui, Santa Clara, CA (US);
Gyuwan Kwon, Cupertino, CA (US);
Trung Pham, Fremont, CA (US);
Chi-Ming Wang, Fremont, CA (US);
SanDisk Corporation, Milpitas, CA (US);
Abstract
According to different embodiments of the present invention, various methods, devices and systems are described for managing power in charge pumps in a non-volatile memory system having a high voltage charge pump and associated regulator. A method includes the following operations, receiving an operation command corresponding to an operation, pumping up a charge pump output voltage to a desired output voltage, turning off the regulator and the charge pump when the output voltage is approximately the desired output voltage compensating for charge sharing by turning on the charge pump and setting a pump clock rate to a slow clock rate in order to avoid overshooting the desired output voltage by the charge pump while the operation is being carried out, and compensating for junction leakage by turning on the regulator and the charge pump until the charge pump output voltage is the desired output voltage.