The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Jul. 20, 2005
Jae-choel Paik, Seongnam-si, KR;
Jae-Choel Paik, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A metal oxide semiconductor (MOS) transistor having a recessed gate electrode and a fabrication method thereof are provided. The MOS transistor includes a semiconductor substrate and an isolation layer formed in a predetermined region of the semiconductor substrate to define an active region. A channel trench region is disposed within the active region to cross the active region. A gate insulating layer is disposed to cover sidewalls and a bottom of the channel trench region. The MOS transistor has a gate pattern that fills the channel trench region and crosses above the active region. A portion of the sidewall of the gate pattern is recessed at an upper corner of the channel trench region and has a width smaller than the width of the top of the gate pattern and smaller than the width of the channel trench region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile