The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Apr. 18, 2005
Applicants:
Stephen Thomas, Iii, Redondo Beach, CA (US);
Kenneth Robert Elliott, Thousand Oaks, CA (US);
David Chow, Newbury Park, CA (US);
Inventors:
Stephen Thomas, III, Redondo Beach, CA (US);
Kenneth Robert Elliott, Thousand Oaks, CA (US);
David Chow, Newbury Park, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A heterojunction bipolar transistor and a method of making a heterojunction bipolar transistor. The heterojunction bipolar transistor includes: a regrown emitter region; an intrinsic base region forming a junction with the regrown emitter region; and an extrinsic base region separated from the regrown emitter region. The thickness of the extrinsic base region is greater than the thickness of the intrinsic base region.