The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Sep. 12, 2003
Nigel D. Young, Redhill, GB;
Soo Y. Yoon, Kyunggi-do, KR;
Ian D. French, Hove, GB;
David J. Mcculloch, Redhill, GB;
Nigel D. Young, Redhill, GB;
Soo Y. Yoon, Kyunggi-do, KR;
Ian D. French, Hove, GB;
David J. McCulloch, Redhill, GB;
TPO Hong Kong Holding Limited, Shatin, HK;
Abstract
A method of manufacturing an electronic device comprising a thin film transistor (), comprises forming a hydrogen-containing layer () over a semiconductor layer (), irradiating the hydrogen-containing layer so as to hydrogenate the semiconductor layer, and then forming electrodes () over the semiconductor layer. A short diffusion length and direct path is provided for the hydrogen thus allowing rapid hydrogenation of the semiconductor layer using relatively few, high-fluence laser pulses. The supporting substrate () is not heated significantly making the method particularly useful for TFTs on polymer substrates. Crystallisation and hydrogenation of the semiconductor layer can be executed in the same irradiation step.