The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2008

Filed:

Jul. 02, 2003
Applicants:

Takashi Watsuji, Osaka, JP;

Gao-chao Lai, Osaka, JP;

Tomohiro Machida, Osaka, JP;

Satoshi Tanaka, Osaka, JP;

Masaomi Hioki, Osaka, JP;

Inventors:

Takashi Watsuji, Osaka, JP;

Gao-Chao Lai, Osaka, JP;

Tomohiro Machida, Osaka, JP;

Satoshi Tanaka, Osaka, JP;

Masaomi Hioki, Osaka, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
Abstract

A paste composition for forming an electrically conductive layer on a p-type silicon semiconductor substrate comprises aluminum powder, an organic vehicle and powder of at least one inorganic compound selected from a group consisting of an oxide-based inorganic compound and a non-oxide-based inorganic compound. The oxide-based inorganic compound has a thermal expansion coefficient smaller than the thermal expansion coefficient of aluminum and a melting temperature, a softening temperature and a decomposition temperature each higher than the melting point of aluminum. The non-oxide-based inorganic compound has a thermal expansion coefficient smaller than the thermal expansion coefficient of aluminum and at least one of a melting temperature, a softening temperature or a decomposition temperature higher than the melting point of aluminum. A solar cell comprises an electrically conductive layer formed by applying the paste composition having the aforementioned characteristics onto a p-type silicon semiconductor substrate and thereafter firing the paste composition.


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