The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Mar. 01, 2006
Masaru Seto, Miyagi, JP;
Junya Maneki, Miyagi, JP;
Masaru Seto, Miyagi, JP;
Junya Maneki, Miyagi, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A semiconductor memory device includes: a laminated body which has a floating-gate-forming groove and includes a semiconductor support layer, an impurity diffusion layer, an ion-implantation-damage protection film, and an interlayer insulating film; a floating-gate-insulating film; a floating gate disposed on the floating-gate-insulating film so as to be buried in the floating-gate-forming groove; a control-gate-insulating film disposed on a surface area of the floating gate; and a control gate disposed on the control-gate-insulating film above the floating gate, wherein the floating-gate-insulating film contacts with the semiconductor support layer at the bottom of the floating-gate-forming groove, the floating-gate-insulating film contacts with the impurity diffusion layer, the ion-implantation-damage protection film, and the interlayer insulating film at the side wall of the floating-gate-forming groove.