The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Dec. 14, 2005
Ryuji Moriwaki, Zama, JP;
Kiyoaki Ogawa, Fujisawa, JP;
Ryuji Moriwaki, Zama, JP;
Kiyoaki Ogawa, Fujisawa, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
This invention makes it possible to simplify a process of manufacturing an SOI substrate whose insulator is not exposed to the side surface. The SOI substrate manufacturing method includes a first step of forming a structure () in which an insulating layer () and semiconductor layer () are in turn formed on a semiconductor member () by bonding a first substrate () to a second substrate (), a second step of making the edge portion of an insulating layer () of the structure () retreat toward the center so that the edge portion of a semiconductor layer () overhangs the edge portion of an insulating layer (), and a third step of moving atoms which form the edge portion of the semiconductor layer () such that the edge portion of a semiconductor layer () covers the periphery of the insulating layer () and connects to the semiconductor member ().