The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2008

Filed:

Mar. 01, 2005
Applicants:

Peter Blaum, Weiterstadt, DE;

Burkhard Speit, Mainz, DE;

Ingo Koehler, Ingelheim, DE;

Bernd Ruediger, Woerrstadt, DE;

Wolfram Beier, Essenheim, DE;

Inventors:

Peter Blaum, Weiterstadt, DE;

Burkhard Speit, Mainz, DE;

Ingo Koehler, Ingelheim, DE;

Bernd Ruediger, Woerrstadt, DE;

Wolfram Beier, Essenheim, DE;

Assignee:

Schott AG, Mainz, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract

The electronic semiconductor component has a crystalline wafer substrate with an active surface and a semiconductor layer coating the active surface. So that the semiconductor layer has a few surface defects the crystalline wafer substrate is a sapphire or silicon carbide single crystal and the active surface has a pit density of less than 500 pit/cm, preferably less than 100 pit/cm. The polishing method for obtaining the active surface with these pit densities includes polishing with a polishing agent, such as a silicon suspension, and a polishing tool, which is pressed on the active surface with a pressure of preferably from 0.05 to 0.2 kg/cmand moved over the active surface with polishing motions distributed statistically and uniformly over a 360° angle during polishing.


Find Patent Forward Citations

Loading…