The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Sep. 09, 2005
Kenya Watanabe, Suwa, JP;
Kenya Watanabe, Suwa, JP;
Seiko Epson Corporation, , JP;
Abstract
A ferroelectric memory includes: a memory cell array in which a plurality of memory cells are disposed, a plurality of wordlines, a plurality of platelines, and a plurality of wordline driver circuits, each of the memory cells including a ferroelectric capacitor. A wordline driver circuit circuits includes: a driver DRV which drives a wordline WL; a transfer transistor TRA provided between the driver DRV and the wordline WL; and a gate control circuit. The gate control circuit performs gate control which causes the transfer transistor TRA to be turned on, and performs gate control which causes the transfer transistor TRA to be turned off, before a voltage of the wordline WL is boosted (before a plateline PL is driven) after the transfer transistor TRA has been turned on.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile