Power consumption minimization in magnetic random access memory by using the effect of hole-mediated ferromagnetism

Abstract

A low-power memory device that uses hole-mediated ferromagnetism creates substantial advantages over conventional systems. Some of these advantages include reducing power consumption by several orders of magnitude and facilitating wireless monitoring of memory cells. In one implementation, an electronic device is described that includes a plurality of memory cells. Each of the memory cells has a material with first and second magnetic states. The material is in the first magnetic state when a contact associated with the material is at a first voltage, and the material is in the second magnetic state when the contact is at a second voltage. A conductor is positioned proximate to and extending around the plurality of memory cells. An inductive voltage across the conductor varies when at least one of the memory cells changes magnetic state. A detection device determines the magnetic state of the memory cells based on an inductive voltage measurement.