The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Sep. 15, 2005
Douglas Burke, Newport Beach, CA (US);
Surya G. K. Prakash, Hacienda Heights, CA (US);
Douglas Burke, Newport Beach, CA (US);
Surya G. K. Prakash, Hacienda Heights, CA (US);
Other;
Abstract
A plasma is generated inside a barrier enclosure made specifically of N-Type semiconductive material, said plasma thus generating a thermal gradient across said barrier which drives electrons through said barrier via the thermoelectric power of said N-Type semiconductor, said electrons thus being liberated on the opposing side of said barrier where they interact with oxygen in the air to form the superoxide ion, O, and a second electrode on said opposing being at a critical minimum negative bias potential to quench collateral production of positive ions and ensuring production only of negative, O, ions.