The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Aug. 09, 2006
Applicants:
Jimmy Fort, Aix-en-Provence, FR;
Jean-michel Daga, Peynier, FR;
Inventors:
Jimmy Fort, Aix-en-Provence, FR;
Jean-Michel Daga, Peynier, FR;
Assignee:
Atmel Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 5/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
An apparatus and method for improving memory cell reliability is disclosed. The slew rate is reduced in an applied voltage signal used to program a memory cell when Fowler-Nordheim (FN) tunneling injection is detected. The applied programming signal is provided by a charge pump that is preferably a regulated charge pump. The charge pump is selectively controlled by a slew rate control circuit when FN tunneling injection is detected by a voltage level detection circuit at a predetermined threshold voltage level.