The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Apr. 30, 2002
James Bernard Kruger, Half Moon Bay, CA (US);
Clint David Snyder, Los Gatos, CA (US);
Patrick Rush Webb, San Jose, CA (US);
Howard Gordon Zolla, San Jose, CA (US);
James Bernard Kruger, Half Moon Bay, CA (US);
Clint David Snyder, Los Gatos, CA (US);
Patrick Rush Webb, San Jose, CA (US);
Howard Gordon Zolla, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The bi-layer anti-reflection coating features a first layer, an absorption layer, disposed on a second layer, a dielectric layer, which is then disposed between a substrate and a photoresist layer. The dielectric/absorption layer comprises one combination selected from Ta/AlO, Ta/SiO, Ta/TiO, Ta/TaO, Ta/CrO, Ta/SiN, Ti/AlO, Ti/SiO, Ti/TiO, Ti/TaO, Ti/CrO, Ti/SiN, Cr/AlO, Cr/SiO, Cr/TiO, Cr/TaO, Cr/CrO, Cr/SiN, Al/AlO, Al/TiO, Al/TaO, Al/CrO, Al/SiN, Ni/AlO, Ni/SiO, Ni/TiO, Ni/TaO, Ni/CrO, Ni/SiN, Ir/AlO, Ir/SiO, Ir/TiO, Ir/TaO, Ir/CrO, and Ir/SiN. At least the absorption and dielectric layers can be formed using vacuum deposition. A unique character of the bi-layer anti-reflective coatings is that it allows a thinner anti-reflection layer that has a wider process latitude.