The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Sep. 28, 2006
Toru Kurosaki, Saitama, JP;
Shinji Kunori, Saitama, JP;
Mizue Kitada, Saitama, JP;
Kosuke Ohshima, Saitama, JP;
Hiroaki Shishido, Saitama, JP;
Masato Mikawa, Saitama, JP;
Toru Kurosaki, Saitama, JP;
Shinji Kunori, Saitama, JP;
Mizue Kitada, Saitama, JP;
Kosuke Ohshima, Saitama, JP;
Hiroaki Shishido, Saitama, JP;
Masato Mikawa, Saitama, JP;
Shindengen Electric Manufacturing Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device having high withstand voltage is provided. An active grooveincludes a long and narrow main groove partand a sub groove partconnected to a longitudinal side surface of the main groove part, and a buried regionof a second conductivity type whose height is lower than the bottom surface of the base diffusion regionof the second conductivity type is provided on the bottom surface of the main groove part. An active groove filling regionof the second conductivity type in contact with the base diffusion regionis provided in the sub groove part. The buried regionis contacted to the base diffusion regionthrough the active groove filling region. Since one gate grooveis formed by the part above the buried regionin one active groove, the gate electrode plugsare not separated, which allows the electrode pattern to be simplified.