The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Jul. 27, 1998
Shuji Nakamura, Anan, JP;
Takashi Mukai, Anan, JP;
Koji Tanizawa, Anan, JP;
Tomotsugu Mitani, Anan, JP;
Hiroshi Marui, Anan, JP;
Shuji Nakamura, Anan, JP;
Takashi Mukai, Anan, JP;
Koji Tanizawa, Anan, JP;
Tomotsugu Mitani, Anan, JP;
Hiroshi Marui, Anan, JP;
Nichia Corporation, Tokushima, JP;
Abstract
A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×10cm, and the resistivity can be lowered below 8×10Ωcm.