The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Oct. 30, 2003
Shinobu Sakurada, Gyoda, JP;
Ken Tomino, Tokyo-to, JP;
Hiroki Maeda, Tokyo-to, JP;
Masanori Akada, Tokyo-to, JP;
Jun-ichi Hanna, Yokohama, JP;
Shinobu Sakurada, Gyoda, JP;
Ken Tomino, Tokyo-to, JP;
Hiroki Maeda, Tokyo-to, JP;
Masanori Akada, Tokyo-to, JP;
Jun-ichi Hanna, Yokohama, JP;
Dai Nippon Printing Co., Ltd., Tokyo-tu, JP;
Abstract
An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 π electron aromatic rings, M 10 π electron aromatic rings, and N 14π electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle θ of impedance of the organic semiconductor material is −80°≦θ≦−90° as determined in the measurement of impedance in a frequency f range of 100 Hz≦f≦1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 μm.