The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Sep. 20, 2004
Sang-wook Ryu, Cheongju-si, KR;
Sang-wook Ryu, Cheongju-si, KR;
Hynix Semiconductor Inc., Kyungki-do, JP;
Abstract
The present invention discloses an image sensor and a method for manufacturing the same which is capable of increasing the light-collection efficiency of a photodiode. The image sensor comprises: at least one photodiode formed on a semiconductor substrate; multilayer interlayer insulating films formed on the photodiode and stacked in at least two layers so that the density of the upper interlayer insulating film becomes lower than that of the lower interlayer insulating film as the multilayer interlayer insulating films proceed upward; a light shield layer and an element-protecting film sequentially stacked on the multilayer interlayer insulating film; color filter arrays and a flattening layer sequentially stacked on the element-protecting film; and microlenses arranged on the positions corresponding to the color filters on the flattening layer. Therefore, the light-collection efficiency of the photodiode can be increased with an increased transmittance of a vertical light reaching to the photodiode by making the multilayer interlayer insulating films have a lower density as they proceed upward to decrease the refraction angle of the incident light penetrated through the microlenses and color filters.