The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Jan. 10, 2007
Kazuyoshi Furukawa, Kawasaki, JP;
Yasuhiko Akaike, Kawasaki, JP;
Shunji Yoshitake, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki-Shi, JP;
Abstract
The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula In(GaAl)P on a GaAs substrateto form an epi-wafer having an n-type cladding layer(0.45<x<0.50, 0≦y≦1), an active layer, a p-type cladding layerand a cover layer; a step of removing the cover layerby etching to expose the surface of the p-type cladding layer; a step of integrally joining a mirror-finished GaP substrateon the p-type cladding layerby placing the GaP substrate on the cladding layer at room temperature so that the mirror-finished surface of the GaP substrate may come into contact with the p-type cladding layer; a step of subjecting the resultant laminate to a heat treatment; a step of carrying out an etching treatment from the side of the GaAs substrateto expose the n-type cladding layer; and a step of forming electrodeson the surface of the n-type cladding layerand on the back surface of the GaP substrate, respectively.