The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2008

Filed:

Dec. 08, 2005
Applicants:

Joo Young Kim, Suwon-si, KR;

Eun Kyung Lee, Seoul, KR;

Bang Lin Lee, Suwon-Si, KR;

Bon Won Koo, Suwon-Si, KR;

Hyun Jung Park, Seoul, KR;

Sang Yoon Lee, Seoul, KR;

Inventors:

Joo Young Kim, Suwon-si, KR;

Eun Kyung Lee, Seoul, KR;

Bang Lin Lee, Suwon-Si, KR;

Bon Won Koo, Suwon-Si, KR;

Hyun Jung Park, Seoul, KR;

Sang Yoon Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (I/I). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.


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