The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Jun. 21, 2002
Toshihiro Ando, Ibaraki, JP;
Mika Gamo, Ibaraki, JP;
Yafei Zhang, Ibaraki, JP;
Japan Science and Technology Agency, Saitama, JP;
National Institute for Materials Science, Ibaraki, JP;
Abstract
3C—SiC nanowhisker and a method of synthesizing 3C—SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C—SiC nanowhisker is formed by depositing thin film () made of a metal element on Si substrate (), placing this Si substrate () into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate () and C in plasma dissolve at supersaturation into metal liquid particle (), 3C—SiC nanowhisker () grows on the metal liquid particles (), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles () at whisker root take in Si from Si substrate () and penetrate into Si substrate ().