The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Oct. 21, 2004
Tingkai LI, Vancouver, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
David R. Evans, Beaverton, OR (US);
Sheng Teng Hsu, Camas, WA (US);
Tingkai Li, Vancouver, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
David R. Evans, Beaverton, OR (US);
Sheng Teng Hsu, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method of selectively etching a three-layer structure consisting of SiO, InO, and titanium, includes etching the SiO, stopping at the titanium layer, using CFin a range of between about 10 sccm to 30 sccm; argon in a range of between about 20 sccm to 40 sccm, using an RF source in a range of between about 1000 watts to 3000 watts and an RF bias in a range of between about 400 watts to 800 watts at a pressure in a range of between about 2 mtorr to 6 mtorr; and etching the titanium, stopping at the InOlayer, using BCl in a range of between about 10 sccm to 50 sccm; chlorine in a range of between about 40 sccm to 80 sccm, a Tin a range of between about 200 watts to 500 watts at an RF bias in a range of between about 100 watts to 200 watts at a pressure in a range of between about 4 mtorr to 8 mtorr.