The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Sep. 23, 2004
Masanori Watanabe, Nara, JP;
Mitsuhiro Matsumoto, Kashihara, JP;
Tadashi Takeoka, Mihara, JP;
Fumie Kunimasa, Tenri, JP;
Masanori Watanabe, Nara, JP;
Mitsuhiro Matsumoto, Kashihara, JP;
Tadashi Takeoka, Mihara, JP;
Fumie Kunimasa, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.