The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Mar. 08, 2005
Hideki Asano, Kanagawa-ken, JP;
Hideki Asano, Kanagawa-ken, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical waveguide layer of AlGaInP, and an upper cladding layer of AlGaInP of the second conductive type are formed in this order on a substrate of GaAs of the first conductive type. The degree of mismatch Δa/a with the substrate and the thickness dw of the quantum-well active layer satisfy the conditions, −0.6%≦Δa/a≦−0.3% and 10 nm≦dw≦20 nm. In addition, the resonator length Lc and the reflectances Rf and Rr of the opposite end facets satisfy the conditions, Lc≧400 μm and Rf×Rr≧0.5.