Solid-state memory device and method for arrangement of solid-state memory cells

Abstract

A high-capacity magnetic memory device in which the magnetic field for writing is nearly uniform for all memory elements. It is realized by reducing the deformation of resist pattern which occurs in photolithography when mask patterns are close to each other. The magnetic memory device is an MRAM composed of a large number of memory cells, each including one TMR element, one transistor for reading (selection), and reading plugs that connect the TMR element to the transistor for reading (selection). These memory cells are arranged such that the TMR elements are in a pattern of translational symmetry. For writing, memory cells are connected by the bit lines and the writing word lines which intersect orthogonally. The long axis of the TMR element is oriented aslant 45° with respect to these lines, so that the TMR elements are capable of toggle-mode writing.