The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Oct. 21, 2003
Masahiro Yasohara, Hyogo, JP;
Koji Kameda, Osaka, JP;
Kazuaki Sakurama, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A gate driver for forcing a power transistor including a gate electrode insulated with oxide film into conduction or shut-off, the gate driver includes a first current source for outputting a first current value to raise an electric potential of the gate electrode for changing shut-off state of the power transistor to conductive state; and a second current source for outputting a second current value to lower the electric potential of the gate electrode for changing the conductive state of the power transistor to the shut-off state. The first current value and the second current value are assigned based on at least one kind of current-source control information. This structure allows preparing an appropriate speed of forcing the power transistor into conduction or shut-off with a small number of elements, and the gate driver can be used with ease for driving power transistors having different output sizes.