The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Dec. 27, 2005
Norio Tada, Kumagaya, JP;
Norio Tada, Kumagaya, JP;
Toshiba Matsushita Display Technology Co., Ltd., Tokyo, JP;
Abstract
A photoelectric conversion element includes a semiconductor layer including a pair of pregions in which p-type impurities are doped, and a pregion which is disposed between the pregions and has a lower p-type impurity concentration than the pregions. A gate electrode is formed over the pregion via a gate insulation film, thus, a p-MOS structure is formed. A width of the gate electrode is less than a width of the pregion. A pregion, which is a portion of the pregion and is located immediately below the gate electrode, forms a light receiving layer, and pregions, which are portions of the pregion and are located away from below the gate electrode, form LDD regions. The photoelectric conversion element is fabricated on the same substrate as a thin-film transistor for a driving circuit, thereby constructing a display device with an input function.