The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Apr. 19, 2006
Paul R. Berger, Columbus, OH (US);
Niu Jin, Champaign, IL (US);
Phillip E. Thompson, Springfield, VA (US);
Sung-yong Chung, Columbus, OH (US);
Paul R. Berger, Columbus, OH (US);
Niu Jin, Champaign, IL (US);
Phillip E. Thompson, Springfield, VA (US);
Sung-Yong Chung, Columbus, OH (US);
The Ohio State University, Columbus, OH (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A Si-based diode () is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction () having a backward diode current-voltage characteristic in which the forward tunneling current is substantially smaller than the backward tunneling current at comparable voltage levels. In some embodiments, the Si-based pn junction includes at least one non-silicon or silicon alloy layer such as at least one SiGe layer (). In some embodiments, at least one delta doping () is disposed on the silicon substrate in or near the pn junction, that together with the Si-based pn junction define an electrical junction having the backward diode current-voltage characteristic. A large area detector array may include a plurality of such Si-based diodes ().