The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Feb. 23, 2006
Mitsuhiko Ogihara, Hachioji, JP;
Hiroyuki Fujiwara, Hachioji, JP;
Masataka Muto, Hachioji, JP;
Takahito Suzuki, Hachioji, JP;
Tomoki Igari, Hachioji, JP;
Mitsuhiko Ogihara, Hachioji, JP;
Hiroyuki Fujiwara, Hachioji, JP;
Masataka Muto, Hachioji, JP;
Takahito Suzuki, Hachioji, JP;
Tomoki Igari, Hachioji, JP;
Oki Data Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a substrate, conductive layer, semiconductor thin films, and individual electrodes. The conductive layer is formed on the substrate and serves as a common electrode. The thin films are bonded on the conductive layer. Each of the plurality of semiconductor thin films includes at least one active region and a contact layer that is in electrical contact with the conductive layer. Each of the individual electrodes is formed on a surface of a corresponding one of the semiconductor thin films in electrical contact with the active region. The thin film may be a single thin film that includes a plurality of active regions formed therein, in which case a different common electrode may be used instead of the common electrode which is in contact with the surface and is electrically isolated from the individual electrodes.