The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Dec. 27, 2006
Itaru Kawabata, Yokkaichi, JP;
Hirofumi Inoue, Kamakura, JP;
Itaru Kawabata, Yokkaichi, JP;
Hirofumi Inoue, Kamakura, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a first trench capacitor formed in a first trench, a second trench capacitor formed in a second trench, a first gate electrode disposed above a first active area, a second gate electrode disposed above a second active area, a first impurity doped region formed in an outer periphery of the second trench including a boundary adjacent to the second trench and doped with an impurity of a first conduction type, and a second impurity doped region formed in the first impurity doped region so as to include the first active area located below the first gate electrode, the second impurity doped region being doped with an impurity of a second conduction type opposite to the first conduction type impurity.