The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Jun. 24, 2004
Applicants:
Yuki Masuda, Tokyo, JP;
Nobuo Kobayashi, Tokyo, JP;
Inventors:
Yuki Masuda, Tokyo, JP;
Nobuo Kobayashi, Tokyo, JP;
Assignee:
TDK Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 35/24 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An organic FETcomprises a substrateon which a gate insulation filmand a reformed layerare formed in this order, and a source electrodeand a drain electrodeare further arranged thereon at a predetermined distance from each other, and furthermore, an organic semiconductor layeris formed on and between the electrodesand. The reformed layerfixed on the gate insulation filmand attached to the organic semiconductor layercontains a specific compound containing the CN group or is composed of only a specific compound containing the CN group.