The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Mar. 15, 2005
Greja Johanna Adriana Maria Verheijden, Valkenswaard, NL;
Pascal Henri Leon Bancken, Opwijk, BE;
Johannes Van Wingerden, AL Hardinxveld-Giessendam, NL;
Greja Johanna Adriana Maria Verheijden, Valkenswaard, NL;
Pascal Henri Leon Bancken, Opwijk, BE;
Johannes van Wingerden, AL Hardinxveld-Giessendam, NL;
Interuniversitair Microelektronica Centrum vzw (IMEC), Leuven, BE;
Koninklijke Philips Electronics, Eindhoven, NL;
Abstract
A method of manufacturing a semiconductor device with precision patterning is disclosed. A structure of a small dimension is created in a material, such as a semiconductor material, using a first and a second pattern, the patterns being identical but displaced over a distance with respect to each other. Two mask layers are used, wherein the first pattern is etched into the upper mask layer with a selective etch, and the second pattern is created on the upper mask layer or on the lower mask layer at locations where the upper mask layer has been removed. A part of the lower mask layer and/or the upper mask layer is etched according to the second pattern, resulting in a mask formed by remaining parts of the lower and upper mask layers, the mask having a structure with a dimension determined by a displacement of the second pattern with respect to the first pattern.